전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제30A권10호
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- Pages.20-26
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- 1993
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- 1016-135X(pISSN)
소자격리구조가 바이폴라 트랜지스터의 콜렉터 전기용량에 주는 영향
Effects of Isolation Oxide Structure on Base-Collector Capacitance
초록
The base-collector capacitance of an npn bipolar transistor in bipolar or BiCMOS technology has significant influence on the switching performances, and comprises pnjunction component and MOS component. Both components have complicated dependences on the isolation oxide structure, epitaxial doping density, and bias voltage. Analytical/empirical formulas for both components are derived in this paper for a generic isolation structure as a function of epitaxial doping density and bias voltage based on some theoretical understanding and two-dimensional device simulations. These formulas are useful in estimating the effect of device isoation schemes on the switching speed of bipolar transistors.
키워드