Sliding diagonal Pattern에 의한 Memory Test circuit 설계

Design of Memory Test Circuit for Sliding Diagonal Patterns

A concrete disign of memory circuit is presented aiming at the application of sliding diagonal test patterns. A modification of sliding diagonal test pattern includes the complexity reduction from O(n$^{32}$) to O(n) using parallel test memory concept. The control circuit design was based on delay-element, and verified via logic and circuit simulation. Area overhead was evaluated based on physical layout using a 0.7 micron design rule resulting in about 1% area increase for a typical 16Mbit DRAM.