한국표면공학회지 (Journal of the Korean institute of surface engineering)
- 제26권1호
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- Pages.3-9
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- 1993
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
SiH$_4$ 를 이용한 텅스텐의 화학증착시 압력증가가 증착에 미치는 영향
The Effect of Pressure Increase on the Deposition of Tungsten by CVD using SiH4
초록
Chemical vapor deposited tungsten films were formed in a cold wall reactor at pressures higher (10~120torr) than those conventionally employed (<1torr). SiH4, in addition to H2, was used as the reduction gas. The effects of pressure and reaction temperature on the deposition rate and morphology of the films were ex-amined under the above conditions. No encroachment or silicon consumption was observed in the tungsten de-posited specimens. A high deposition rate of tungsten and a good step coverage of the deposited films were ob-tained at 40~80 torr and at a temperature range of
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