Journal of the Korean Vacuum Society (한국진공학회지)
- Volume 2 Issue 4
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- Pages.501-506
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- 1993
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- 1225-8822(pISSN)
The Effect of Substrate DC Bias on the Low -Temperature Si homoepitaxy in a Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition
초고진공 전자 사이클로트론 화학 기상 증착 장치에 의한 저온 실리콘 에피 성장에 기판 DC 바이어스가 미치는 영향
Abstract
The spatial potential distribution of electron cyclotron resonance plasma is measured as a function of tehsubstrate DC bias by Langmuir probe method. It is observed that the substrate DC bias changes the slope of the plasma potential near the subsrate, resulting in changes in flux and energy of the impinging ions across plasma
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