Fabrication and Characterization of Silicon Device for Flow Measurement(l)

흐름측정용 실리콘 소자의 제작 및 특성 평가(l)

Abstract The hot wire anemometer-type flow sensor, which consisted of Ni thin film resistors evaporated on Si substrates, was fabricated and characterized. It was known that the temperature coefficients of Ni resistors were decreased as the film thickness was thinned and the operating characteristics of the fabricated flow sensor were determined as a sensitivity of 111.3${\mu}$W/(${\ell}$ pm$)^{1/2}$ and a dynamic response time of several 10 seconds.

Si기판상에 Ni 박막 저항체를 형성하여 hot wire anemometer형 흐름측정 소자를 제작하고 이의 특성을 평가하여 보안ㅆ다. 니켈 박박 저항체의 온도계수는 박막의 두께가 얇아짐에 따라 감소하였으며, 제작된 흐름센서의 감ㅁ도는 111.3${\mu}$W/(${\ell}$ pm$)^{1/2}$, 동적인 응답시간은 수 십초 정도로 평가되었다.