Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Coherent Precipitation of $Zn_3P_2$ During Zn Diffusion in a GaInAsP/InP Heterostructure

GaInAsP/InP 이종구조에서 Zn 확산에 의한 $Zn_3P_2$의 정합석출

  • 홍순구 (한국과학기술연구원 전자재료공학과) ;
  • 이정용 (한국과학기술연구원 전자재료공학과) ;
  • 박효훈 (한국전자통신연구소 기초기술연구부)
  • Published : 1993.03.01
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Abstract

Coherent precipitation of Zn3P2 during Zn diffusion in a GaInAsP/InP heterostructure was studied using high-resolution transmission electron microscopy. Zn-diffusion-induced intermixing of Ga and In across the GaInAsP/InP heterointerface provided a Ga-mixed InP region which was nearly lattice-matched with Zn3P2 crystal and thus allowed thecoherent precipitation of Zn3P2. The Zn3P2 precipitates were preferentially nucleated at stacking faults which were formed to relax interfacial strain built up by the intermixing. The precipitates were grown to planar epitaxial layer along (100) plane in the lattice-matched region. The TEM images and diffraction pettern revealed that the tetragonal Zn3P2 crystals were coherently matched to the fcc structured GaInP matrix by the {{{{ SQRT {2} $\times$ SQRT {2} $\times$2 }} arrangement. The precipitation reaction of Zn3P2 was explained by an atomic migration model based on the kick-out mechanism.

Keywords

References

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