Korean Journal of Materials Research (한국재료학회지)
- Volume 2 Issue 5
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- Pages.353-359
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- 1992
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- 1225-0562(pISSN)
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- 2287-7258(eISSN)
T$a_2O_5$ Dielectric Thin Films by Thermal Oxidation and PECVD
열산화법 및 PECVD 법에 의한 T$a_2O_5$ 유전 박막
- Mun, Hwan-Seong (Dept. of Metallurgical Engineering, Hanyang University) ;
- Lee, Jae-Seok (Dept. of Metallurgical Engineering, Hanyang University) ;
- Lee, Jae-Seok (Dept. of Metallurgical Engineering, Hanyang University) ;
- Lee, Jae-Seok (Dept. of Metallurgical Engineering, Hanyang University) ;
- Yang, Seung-Gi (Samsung Advanced Institute of Technology) ;
- Lee, Jae-hak ;
- Park, Hyung-ho ;
- Park, Jong-wan
- 문환성 (한양대학교 공과대학 금속공학과) ;
- 이재석 (한양대학교 공과대학 금속공학과) ;
- 한성욱 (한양대학교 공과대학 금속공학과) ;
- 박상균 (한양대학교 공과대학 금속공학과) ;
- 양승기 (삼성종합기술원) ;
- 이재학 ;
- 박형호 ;
- 박종완
- Published : 1992.10.01
Abstract
Thermal oxidation and plasma enhanced chemical vapor deposition of tantalum oxide thin films on p-type (100) Si substrates were studied to examine the dielectric nature of T
열산화법과 PECVD법으로 p-type (100) Si 기판위에 T
Keywords