Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 29A Issue 8
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- Pages.49-55
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- 1992
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- 1016-135X(pISSN)
Structural and Electrical Properties of Reactively Sputtered Titanium Nitride Films
DC 반응성 스퍼터링된 TiN 박막의 구조적 및 전기적 특성
Abstract
We Have investigated the properties of the titanium nitrite films widely used in VLSI devices as diffusion barrier in Al-based metallization. TiN films were formed by reactive sputtering from Ti target in Ar-N
Keywords