전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제29A권3호
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- Pages.87-95
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- 1992
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- 1016-135X(pISSN)
열산화법으로 형성한 탄탈륨 산화막의 전기적 특성
Electric Characteristics of Tantalum Pentoxide Thin Film Formed by Thermal Oxidation
초록
The electrical characteristics of Al/TaS12TOS15T/SiOS12T/Si metal insulator-semiconductor (MIS) capacitors were studied. Tantalum pentoxide thin films on SiOS12T/p-Si substrate have been prepared by thermal oxidation at 450-
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