전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제29A권3호
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- Pages.72-78
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- 1992
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- 1016-135X(pISSN)
실리콘 종형 홀 소자의 제조 및 그 특성
Fabrication and Characterization of the Silicon Vertical Hall Devices
초록
The Silicon vertical Hall devices are fabricated using standard bipolar process and characterized in terms of the Hall voltage, sensitivities, and offset voltage. The Hall voltage and sensitivity of the devices showed good linearity with respect to the magnetic flux density and reverse supply voltage Vr. The sensitivity of device with P
키워드