전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제29A권2호
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- Pages.18-23
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- 1992
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- 1016-135X(pISSN)
GaAs FET를 이용한 초고주파용 증폭기 설계에 관한 연구
A Study on the Design of Amplifier for Microwave using GaAs FET
초록
Recently, SSPAs(Solid-State Power Amplifiers) with high linearity and efficiency replace TWTAs (Traveling-Wave-Tube Amplifiers) in satellite transponders. In this paper, a power amplifier with maximum output power is designed and constructed using GaAs FET(MGF-1302) as a test model for the development of SSPAs. For conjugate matching of input and output network, transimission lines and stubs are optimized using microwave CAD program, LINMIC+. Power amplifier is realized on the teflon substrate(
키워드