Korean Journal of Crystallography (한국결정학회지)
- Volume 3 Issue 1
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- Pages.53-66
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- 1992
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- 1229-8700(pISSN)
The Behavior of TiN Thin Film Growth According to Substrate Surface Conditions in PECVD Process
모재표면오건에 따른 TiN 박막의 Morphology변화
Abstract
Extensive research has been perform성 on the property-microstructure-process condition relations of thin films. The various proposed models are mainly based on physical vapor deposition processes. Especially the study on the surface condition of substrates in Zone 1 with low surface mobility has not been sufficient. In this study, therefore, we discussed the mochological changes of TiN films deposited by plusma enhanced chemical vapor deposition process with substrates of different composition and micro-rorghness, and compared it with the Structure Zone Model. We could find out that the growth rate of films increased and micro-grain size decreased with the increase in micro-roughness, but it does not improve the mechanical properties because of many imperfections like voids, micro-cracks, stacking faults, etc. This means that, in these deposition conditions, the increase in shadowing diffect is more effective than the increase in nucleation sites on the growth of films due to the increase in substrate roughness.
Keywords