전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제28A권5호
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- Pages.380-386
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- 1991
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- 1016-135X(pISSN)
PAE법에 의한 GaAs/Ge/Si 이종접합 성장과 그 특성
GaAs/Ge/Si Heteroepitaxy by PAE and Its Characteristics
초록
Hydrogen plasma-assisted epitaxial(PAE) growth of GaAs/Si and GaAs/Ge/Si with Ge buffer layer has been investigated. By means of photoluminescence, Nomarski microscopu, and
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