전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제28A권1호
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- Pages.30-39
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- 1991
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- 1016-135X(pISSN)
MOCVD를 이용한 Heteroface p-$Al_{x}Ga_{1-x}As/p-GaAs/n-GaAs/n^{+}$ -GaAs 태양전지의 개발
Heteroface p-$Al_{x}Ga_{1-x}As/p-GaAs/n-GaAs/n^{+}$ -GaAs Solar Cell Grown by MOCVD
초록
The influence of physical parameters (Al mole fraction, thickness, doping concentration) in the window and emitter on the efficiency characteristics of heteroface p-
키워드