전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제28A권9호
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- Pages.752-760
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- 1991
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- 1016-135X(pISSN)
MOCVD를 이용한 화합물 반도체 Solar Cell의 개발-Field Aided Heteroface 전지
Design and Fabrication of Compound Semiconductor Solar Cells Grown by MOCVD-Field Aided Heteroface Cell
초록
The computer aided analysis is performed to investigate the influence of physical parameters (thickness and doping concentration, etc.) in the window, emitter, base on the efficiency characteristics of a uniformly doped hetroface cell. A field aided heteroface cell is newly designed on a basis of optimum data obtained from the theoretical analysis. The field aided heteroface cell fabricated using MOCVD exhibits a total/active area conversion efficiency of EFF. (tot) = 18.9% /EFF. (act.) = 21.4% under the natural incident light of 56.2 mW/cm\ulcorner having a low series resistance of Rs = 0.94 \ulcornercm\ulcornerand a high spectral response of S.R. (ext) > 90% in a range of
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