Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 28A Issue 9
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- Pages.743-751
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- 1991
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- 1016-135X(pISSN)
A Study on the Characteristics of PSA Device using RTA Process and Trench Technology
RTA 공정 및 Trench 격리기술을 사용한 PSA 바이폴라 소자의 특성 연구
- Koo, Yong-Seo (Electronics and Telecommunication Research Institute) ;
- Kang, Sang-Won (Electronics and Telecommunication Research Institute) ;
- An, Chul (Dept. of Elec. Eng., Sogang Univ.)
- Published : 1991.09.01
Abstract
This paper presents the 1.5\ulcorner PSA bipolar device which establishes the performance improvement such as the reduction of emitter resistance and substrate junction capacitance. To achieve the above electrical characteristics, RTA process and trench isolation technology were adapted. The emitter resistance and substrate capacitance of npn transistor having 1.5
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