A Study on the Chemical Vapor Deposition of BPSG and its Thin Film Properties

B2O3-P2O5-SiO2 계 박막유리의 화학증착 및 물성에 관한 연구

  • 김은산 (금성일렉트론(주) 반도체연구소) ;
  • 양두영 (금성일렉트론(주) 반도체연구소) ;
  • 김동원 (금성일렉트론(주) 반도체연구소) ;
  • 김우식 (금성일렉트론(주) 반도체연구소) ;
  • 최민성 (금성일렉트론(주) 반도체연구소)
  • Published : 1991.07.01

Abstract

The CVD process of BPSG (BoroPhosphoSilicate Glass) and its thin film properties were studied. B2H6, PH3, SiH4 and O2 gases were reacted in a AP (Atmospheric Pressure) CVD system in the temperature range of 300℃ and 460℃. The interaction of B2H6 and PH3 was studied from the deposition rate and dopant incorporation change point of view. The dependency of BPSG step coverage on the temperature was changed with different O2/(B2H6+PH3+SiH4) ratio. Finally, the boundary which distinguishes the stable BPSG's from the ones that react with Di (Deionized) water or cleaning chemicals such as H2SO4, HCl, H2O2, NH4OH etc could be defined.

Keywords

References

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