대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)
- 제27권12호
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- Pages.1841-1851
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- 1990
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- 1016-135X(pISSN)
이온빔 증착 텅스텐을 이용한 자기정렬 게이트 GaAs MESFET의 전기적 특성
Electrical Characteristics of Self Aligned Gate GaAs MESFETs Using Ion Beam Deposited Tungsten
초록
Self-aligned gate GaAs MESFETs using ion beam deposited tungsten applicable to GaAs LSI fabrication process have been fabricated. Silicon implanted samples were annealed using isothermla two step RTA process and conventional one step RTA process. The electrical and physicla characteristics of annealed samples were investigated using Hall and I-V measurements. As results of measurements, activation characteristics of the isothermal two step RTA process are better than those of one step annealed ones. Using the developed processes, GaAs SAFETs (Self-Aligned Gate FET) have been fabricated and electdrical characteirstics are measured. As results, subthreshold currents of SAGFETs are 6x10**-10 A/\ulcorner, that is compatible to conventional MESFET, maximum transconductances of 0.75\ulcorner gate MESFET using one step RTA process and 2\ulcorner gate MESFET using isothermal two step RTA process are 18 mS/mm, 41 mS/mm respectively.
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