대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)
- 제27권9호
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- Pages.1402-1408
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- 1990
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- 1016-135X(pISSN)
FA-CVD에 의한 미세결정질 실리콘 박막 제작 및 특성
Characterization and Fabrication of Microcrystalline Si Thin Films Prepared by FA-CVD
- Cheong, Chang-Young (Dept. of Elec. Eng., Kyunghee Univ.) ;
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Chung, Kwan-Soo
(Dept. of Elec. Eng., Kyunghee Univ.) ;
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Jang, Jin
(Dept. of Physics, Kyunghee Univ.)
- 발행 : 1990.09.01
초록
We studied the electrical, optical and structural properties of microcrystalline silicon thin films prepared by a new chemical vapour deposition technique, called filament assisted(FA)-CVD. The microcrystalline silicon is sucessfully deposited when the hydrogen dilution ratio exceeds 30. The Raman peak at 520 cm-1 and the X-ray diffraction peak at 27.7\ulcorner0.2\ulcornerbecome sharper with increasing hydrogen dilution ratio. We obtain high quality microcrystalline Si by FA-CVD with optical gap of \ulcorner2.2eV and hydrogen content of \ulcorner3 at %.
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