Characterization and Fabrication of Microcrystalline Si Thin Films Prepared by FA-CVD

FA-CVD에 의한 미세결정질 실리콘 박막 제작 및 특성

  • 정창영 (경희대학교 전자공학과) ;
  • 정관수 (경희대학교 전자공학과) ;
  • 장진 (경희대학교 물리학과)
  • Published : 1990.09.01

Abstract

We studied the electrical, optical and structural properties of microcrystalline silicon thin films prepared by a new chemical vapour deposition technique, called filament assisted(FA)-CVD. The microcrystalline silicon is sucessfully deposited when the hydrogen dilution ratio exceeds 30. The Raman peak at 520 cm-1 and the X-ray diffraction peak at 27.7\ulcorner0.2\ulcornerbecome sharper with increasing hydrogen dilution ratio. We obtain high quality microcrystalline Si by FA-CVD with optical gap of \ulcorner2.2eV and hydrogen content of \ulcorner3 at %.

Keywords