The Thin Multi-Layer Crystal Growth of InGaAsP($1.3{\mu}m$)/InP bgy Vertical LPE System

수직형 LPE에 의한 InGaAsP($1.3{\mu}m$)/InP 다층박막 결정성장

In this paper the results for thin multi-layer InGaAsP($1.3{\mu}m$)/InP crystal growth by vertical liquid epitaxial growing furnance have been presented. The growth rates of InGaAsP layer and InP layer at cooling rate of $0.3^{\circ}C$/min and the growing temperature of $630^{\circ}C$ were obtained as $0.11 {\mu}m$/min and $0.06 {\mu}m$/min, respectively, by the uniform cooling with two phase solution technique.