Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 26 Issue 6
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- Pages.63-70
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- 1989
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- 1016-135X(pISSN)
Physical Properties of AuGe Liquid Metal Ion Implanted n-GaAs
AuGe 액체금속 이온이 주입된 n-GaAs의 물성연구
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Kang, Tae-Won
(Dept. of Physics, Dongguk Univ.) ;
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Lee, Jeung-Ju
(Dept. of Physics, Gyungsang Univ.) ;
- Kim, Song-Gang (Dept. of Physics, Dongguk Univ.) ;
- Hong, Chi-Yhou (Dept. of Physics, Dongguk Univ.) ;
- Leem, Jae-Young (Dept. of Physics, Dongguk Univ.) ;
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Chung, Kwan-Soo
(Dept. of Elec. Eng., Kyunghee Nat'l Univ.)
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강태원
(東國大學校 物理學科) ;
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이정주
(慶尙大學校 物理學科) ;
- 김송강 (東國大學校 物理學科) ;
- 홍치유 (東國大學校 物理學科) ;
- 임재영 (東國大學校 物理學科) ;
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정관수
(慶熙大學校 電子工學科)
- Published : 1989.06.01
Abstract
The ion beam extracted from the AuGe liquid metal ion source was implanted into GaAs substrate. The surface composition and the structure of ion implanted samples were investigated by AES, RHEED, SEM and EPMA. The depth profiles measured by AES were compared with the results of Monte Carlo simulation based on the two-body collision. As the results of AuGe ion implantation the preferential sputtering of As were revealed by AES and EPMA, and the outdiffusion of Ga and Ge was investigated by 300
액체금속이온원으로 부터 발생한 AuGe 이온빔을 GaAs기판에 주입시킨 후 이 시료의 표면성분과 구조를 AES(Auger electron spectroscopy), RHEED(reflection high energy electron diffraction), SEM(scanning electron microscopy) and EPMA(electron probe microanalysis)등으로 조사하였으며 AES depth profile 실험결과를 이체충돌에 의한 Monte Carlo simulation과 비교하였다. AuGe 이온이 주입된 시료를 AES, EPMA로 측정한 결과 As의 preferential스피터링이 나타났으며 300
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