Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 26 Issue 1
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- Pages.48-61
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- 1989
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- 1016-135X(pISSN)
Two-Dimensional Numerical Simulation of GaAs MESFET Using Control Volume Formulation Method
Control Volume Formulation Method를 사용한 GaAs MESFET의 2차원 수치해석
- Son, Sang-Hee (Dept. of Computer Science, Soonchunhyang Univ.) ;
- Park, Kwang-Mean (Dept. of Elec. Eng., Soonchunhyang Univ.) ;
- Park, Hyung-Moo (Electronics & Telecommunications Research Institute) ;
- Kim, Han-Gu (Dept. of Elec. Eng., Hanyang Univ.) ;
- Kim, Hyeong-Rae (Dept. of Elec. Eng., Hanyang Univ.) ;
- Park, Jang-Woo (Dept. of Elec. Eng., Hanyang Univ.) ;
- Kwack, Kae-Dal (Dept. of Elec. Eng., Hanyang Univ.)
- 손상희 (順天鄕大學 電算學科) ;
- 박광민 (順天鄕大學 電子工學科) ;
- 박형무 (韓國電子通信硏究所) ;
- 김한구 (漢陽大學校 電子工學科) ;
- 김형래 (漢陽大學校 電子工學科) ;
- 박장우 (漢陽大學校 電子工學科) ;
- 곽계달 (漢陽大學校 電子工學科)
- Published : 1989.01.01
Abstract
In this paper, two-dimensional numerical simulation of GaAs MESFFT with 0.7
본 논문에서는 게이트의 길이가 0.7
Keywords