C-밴드 GaAs MESFET 발진기의 광 응답 특성

Optical Response Characteristics of C-Band GaAs MESFET Oscillators

In this thesis, to verify input-output characteristics of GaAs MESFET, light is illuminated to C-band oscillator which already designed and manufactured, thus input-output variation of GaAs MESFET is to be shown. Experimental results of two kinds of optical effects, optical tuning and opticla switching, of GaAs MESFET Oscillators are presented. For optical tuning, the Oscillation frequency decreases with optical illumination and the Oscillator power output generally increases with optical illumination, the increase being around 1 to 3 dBm at 1mW/mm\ulcornerlight intensity. While the DC-lingt illuminated Oscillator response data provide information of the optical senditivity of GaAs-MESFET Oscillators. Pulse-light illuminated transient response data can be invoked to understand the detailed optical-electrical interaction mechanisms response. Thus, it is shown that direct control of micro-devices is realisable, if we use optical effect of GaAs semiconductor compound.