대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)
- 제26권11호
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- Pages.1706-1711
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- 1989
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- 1016-135X(pISSN)
HEMT 소자 공정연구, Part III : 개별소자 제작 및 특성분석
A Study on HEMT Device Process, Part III: Fabrication of a discrete Device and its Characteristics
초록
Unit processes for the fabrication of HEMT(high electron mobility transistor)was studied and the optimum conditions of them were applied to the fabrifcation of a discrete HEMT device. The HEMT with a nominal gate-source spacing of 3.6\ulcorner and a gate length of 2.8\ulcorner showed a transconductance of 46.1mS/mm and a threshold voltage of -0.29V. A source-drain voltage of 2.0V for a saturation current of 35mA/mm was achieved.
키워드