얇은 절연막의 TDDB 분석과 전기적 특성

TDDB Analysis and Electrical Characteristics of Thin Insulator Films

In this paper, the characteristics of electrical breakdown and TDDR (Time Dependant Dielectric Breakdown) were studied to evaluate stability and reliability of thin insulator films such as oxide and nitride. As the oxide film thickness decreased, the electrical breakdown field was increased proportioning to its reverse square root, ${d^{-\frac{1}{2}}}$. As for the temperature dependance of breakdown field, its field was inclined to decrease as temperature increased. It also showed that oxide charge (Qss) was changed by stress field and stress time. Consequently, TDDB characteristics and breakdown mechanism proved the improvement of reliability and stability and provided the accurate analysis to predict a device life time.