Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effects of sintering conditions of (Cd+Te) films on the properties of sintered CdS/CdTe solar cells

(Cd+Te)막의 소결조건이 CdS/CdTe 태양전지의 특성에 미치는 영향

  • 노재성 (한국과학기술원 재료공학과) ;
  • 임호빈 (한국과학기술원 재료공학과)
  • Published : 1988.01.01
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Abstract

Sintered CdS/CdTe solar cells have been farbricated by coating a (Cd+Te) slurry on sintered CdS films followed by the sintering at 625.deg.C for one hour with various heating rates. When cadmium and tellurinm powders are used instead of CdTe powder to form CdS/CdTe junction, CdTe is formed in the temperature range of 290.deg.C-400.deg.C. The microstructure of the CdTe films depends strongly on the heating rate of the sintering due to the low melting temperature and the high vapor pressure of the elemental Cd and Te. An optimum heating rate obtain CdTe films with uniform and dense microstructure which, in turn, improves the efficiency of the sintered CdS/CdTe solar cells. All-polycrystalline CdS/CdTe solar cells with an efficiency of 9.57% under 50mW/cm$^{2}$ tungsten light have been farbricated by using a heating rate of 14.deg.C/min.

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