Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Model for Characteristics in the $AL_xGa_{1-x} As Layer$ of MOSFET's

MODFEET의 $AL_xGa_{1-x} As Layer$내의 특성 모델

  • Park, Kwang Mean (Dept. of Elec. Eng., Hanyang Univ.) ;
  • Oh, Yun Kyung (Dept. of Elec. Eng., Hanyang Univ.) ;
  • Kim, Hong Bae (Dept. of Semi. Eng., Chongju Univ.) ;
  • Kwack, Kae Dal (Dept. of Elec. Eng., Hanyang Univ.)
  • 박광민 (한양대학교 전자공학과) ;
  • 오윤경 (한양대학교 전자공학과) ;
  • 김홍배 (청주대학교 반도체공학과) ;
  • 곽계달 (한양대학교 전자공학과)
  • Published : 1987.03.01
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Abstract

In this paper, a model for characteristics in the AlxGa1-xAs layer of MODFET's is presented. The characteristics of conduction band in the AlxGa1-xAs layer is analyzed with the Fermi-Dirac statistics. And using the conduction band energy which is calculated with the numerical calculation method (false-Positon method), the variations of the electric-field distribution, the ionized donor concentration, and the two-dimensional electron gas density with gate voltage are calculated, respectively. The channel formation process for the parasitic MESFET operation in the MOD structure is also analyzed, and the characteristics in the AlxGa1-xAs layer is analytically modeled. The throretical results describe well the general characteristics in the MOD structure.

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