대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

$Co_2$ 레이저 열처리에 의한 SOI 구조에서의 다결정 실리콘의 재결정화

The Recrystallization of Polysilicon in SOI by $Co_2$ Laser Annealing

  • 오민록 (서강대학교 전자공학과) ;
  • 안철 (서강대학교 전자공학과)
  • Oh, Min-Rok (Dept. of Elec. Eng., Sogang Univ.) ;
  • An, Chul (Dept. of Elec. Eng., Sogang Univ.)
  • 발행 : 1987.06.01
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초록

The recrystallization of polysilicon layer deposited on SiO2 was attempted by means of CO2 laser annealing in this paper. SiO2 layer of 13000\ulcornerthick and polysilicon layer of 6000\ulcornerthick were successively deposited on (100) Si wafer by thermal oxidation and LPCVD, respectively. Prior to the annealings the polysilicon layer was defined in small island patterns by means of photolithography. After the annealing an increase in grain size from 1000\ulcornerto 2-10 =\ulcorner was observed by SEM.

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