Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication of $1{\mu}$ m Gate GaAs MESFET and Analysis of Correlation Between DC Characteristics and Channel Parameters

$1{\mu}$ 게이트 GaAs MESFET의 제조 및 DC 특성과 채널 파라미터들 사이의 상호관게 분석

  • 엄경숙 (한국과학기술원 연구부 반도체 재료 연구실) ;
  • 이유종 (한국과학기술원 연구부 광전자공학 연구실) ;
  • 강광남 (한국과학기술원 연구부 광전자공학 연구실)
  • Published : 1987.05.01
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Abstract

1\ulcorner gate MESFETs are fabricated on MOCVD and VPE grown GaAs wafers using photolithography, chemical wet etching and lift-off techniques. DC characteristics such as Vt, Gm, Rs, etc. are studied and active channel parameters of MESFET(a, n, Leff, \ulcorner)are analyzed for 1-4 \ulcorner gate FETs and 100\ulcorner FAT FET. The correlation between DC data and active channel parameters are experimentally analyzed. The measured transconductance and low-field mobility in the active channel for the 1\ulcorner gate MESFET made on MOCVD wafer are 67mS/mm and 2980cm\ulcornerVs respectively.

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