포획준위 밀도 예정을 통한 열증착한 일산화규소 박막과 고주파 스퍽터링한 이산화규소 박막의 특성비교

Comparison of Characteristics Between Thermal Evaporated SiO and rf Sputtered $SiO_2$ Thin Films by Trap Density Measurements

Thermal evaporated SiO rf sputtered SiO2 thin films were most widely used to the gate oxide of TFTs. In this paper, the difference of trap density and distribution between SiO2 and SiO2 film were studied. TFTs using SiO and SiO2 thin film for the gate oxide were fabricated. The output characteirstics of TFTs and the time dpendencd of the leakage current were measured. Models of the carrier transport and carrier trapping in TFT were proposed. The trap density was obtained by substituting measured value for the equation derived from the proposed model. It was found that rf sputtered SiO2 had more traps at interface than thermal evaporated SiO.