Study on the Improvement of Sub-Micron Channel P-MOSFET

$1{\mu}m$ 이하의 채널 길이를 가지는 P-MOSFET의 특성 개선에 관한 연구

In order to prevent the short-channel effects due to threshold voltage adjustment implantation in conventional n+ doped silicon gate process, a new approach involving automatic doping of polycide by boron during source and drain implantation is introduced. P-MOSFET devece fabricated by theis approach shows improved short channel characteristics than conventional device with n+ doped gate. Some concerns of adopting this approach in CMOS technology are addressed togetheer with some suggestions.