Nb+5첨가된 반도성 BaTiO3세라믹스에서 MoO3의 영향과 주파수 특성

Effect of MoO3 Addition and Their Frequency Characteristics in Nb+5 doped Semiconductive BaTiO3 Ceramics

  • 윤상옥 (한국과학기술원 무기재료연구실) ;
  • 정형진 (한국과학기술원 무기재료연구실) ;
  • 윤기현 (연세대학교 요업공학과)
  • 발행 : 1987.01.01

초록

Effect of MoO3 additiion on the semiconductive BaTiO3 ceramics doped with 0.2 mole% Nb2O5 and their frequency characteristics have been investigated on the view of intergranular barrier layer model through the observation of changes in their electrical properties. The resistivity increases with the increase of MoO3 addition, but the capacitance, the frequency dependence of capacitance and the effect of positive temperature coefficient of resistivity (PTCR) decrease. It is explained by the possible increase in the thickness of potential barrier due to the formation of insulating layer and thus decrease in the degree of energy band bending. Both the PTCR effect and resistivity decrease with the increase of frequency due to the possible elimination of barrier layer at the grain boundary.

키워드

참고문헌

  1. German Patent 929,350 Method of Preparation of Semiconducting Materials P. W. Haayman;R. W. Dam;H. A. Klasens
  2. J. Am. Ceram. Soc. v.47 no.10 Resistivity Anomaly in Doped Barium Titanate W. Heywang
  3. Solid State Electron v.3 no.51 Barium Titanat als Sperrsshichalbleiter W. Heywang
  4. Solid State Electron v.7 no.895 Some Aspects of Semiconducting Barium Titanate G. H. Jonker
  5. J. Am. Ceram. Soc. v.68 no.10 PTCR Effect in BaTiO₃ C. V. Lewis;C. R. A. Catlow;R. E. W. Classelton
  6. Philips. Res. Rep. v.31 no.6 Electrical Conductivity at High Temperature of Donor-Doped Barium Titanate Ceramics J. Daniel;K. H. Hardtl
  7. J. Am. Ceram. Soc. v.68 no.1 Grain Boundary Characteristics and Their Influence on the Electrical Resistance of Barium Titanate Ceramics G. Koschek;E. Kubalek
  8. J. Am. Ceram. Soc. v.44 no.5 Possible Explanation of Positive Temperature Coefficient in Resistivity of Semiconducting Ferroelectrics W. T. Peria;W. R. Bratschun;R. D. Fenity
  9. J. Phys. Soc. Jpn. v.14 no.9 Properties of Semiconductive Barium Titanate O. Saburi
  10. Philips Tech. Rev. v.26 no.1;5;6 Investigations on BaTiO₃ Semiconductor E. Andrich;K. H. Hardtl
  11. Mat. Res. Bull. v.21 no.1429 Influence of Synthesis Methods on the PTCR Effect on Semiconductive BaTiO₃ K. H. Yoon;K. Y. Oh;S. O. Yoon
  12. J. Am. Ceram. Soc. v.55 no.2 PTCR Behavior of BaTiO₃ with $Nb_2O_5$ and MnO₂ Additives T. Matsuoka;Y. Matsuo;H. Sasaki;S. Hayakawa
  13. J. Mat. Sci. v.6 no.1214 Semiconducting Barium Titanate W. Heywang
  14. Advances in Ceramics v.7 K. Mada;t. Miyoshi;Y. Takeda;K. Nakamurer;S. Ogihara;M. Ura
  15. Metal Finishing v.53 no.59 Electroless Nickel Deposition F. Pearlstein
  16. J. Appl. Phys. v.36 no.2000 Electrodes for Ceramic Barium Titanate Type Semiconductors H. M. Landis
  17. J. Electrochem. Soc. v.107 no.250 Ohmic Contacts to Semiconcucting Ceramics D. R. Turner;H. A. Sauer
  18. J. Appl. Phys. v.50 no.6 Capacitance vs Voltage Characteristics of ZnO Varistors K. Mukae;K. Tsuda;I. Nagasawa
  19. Dielectrics and Waves R. V. Hippel
  20. J. Am. Ceram. Soc. v.63 no.7-8 Direct Examimations of PTC Action of Single Grain Boundaries in Semiconducting BaTiO₃Ceramics H. Nemoto;I. Oda