The Transactions of the Korean Institute of Electrical Engineers (대한전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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Submicron Pattern Delineation with the Obliquely Deposited Inorganic a-Se75Ge25 photoresist.

증착각도를 달리한 무기질 $a-Se_{75}Ge_{25}$ 포토레지스트의 미세패턴형성

  • 정홍배 (광운대학 전자재료공학과) ;
  • 이영종 (광운대학 전자재료공학과) ;
  • 류희관 (광운대학 전자재료공학과) ;
  • 허휘 (광운대학 전자재료공학과)
  • Published : 1987.09.01
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Abstract

In this study, we investigate the etching characteristics of a-Se75 Ge25 thin films. Etching properties are revealed as a function of obliqueness, temperature and concentraction of the etching solution. As the increase of obliqueness, selective etching effect increase rapidly by 35% at 80 obliqueness, and the etching rate increase the elevated temperature of the solution. The change of etching rate with obliqueness are related closely to the optical change due to the band gap illumination. We obtained clear pattern of 1.5um linewidth.

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