Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 23 Issue 6
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- Pages.801-806
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- 1986
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- 1016-135X(pISSN)
Selective Si Epitaxy for Device Isolation
소자분리를 위한 선택적 실리콘 에피택시
- Yang, Jeon Wook (Electronics and Telecommunications Research Institute) ;
- Cho, Kyoung Ik (Electronics and Telecommunications Research Institute) ;
- Park, Sin Chong (Electronics and Telecommunications Research Institute)
- 양전욱 (한국전자통신연구소) ;
- 조경익 (한국전자통신연구소) ;
- 박신종 (한국전자통신연구소)
- Published : 1986.06.01
Abstract
The effect of SiH2Cl2 -HCl gas on the growth rate of epitaxial layer is studied. The temperature, pressure and gas mixing ratio of SiH2Cl2 and HCl are varied to study the growth rate dependence and selective Si epitaxy. The P-n junction diode is fabricated on the epitaxial layer and electrical characteristics are examined. Also, using selective Si epitaxy, a possibility of thin dielectric isolation process, that gives an independent isolation width on the mask dimension, is examined.
Keywords