대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)
- 제23권6호
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- Pages.754-757
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- 1986
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- 1016-135X(pISSN)
Si(100) 기판위에 에피텍시된 BP(100)의 성장조건 및 결정성
Some Crystalline Properties and Growth Condition of BP(100)Epitaxially Grown on Si(100) Substrates
- 김철주 (서울시립대학 전자공학과) ;
- 고연규 (연세대학교 물리학과) ;
- 안철 (서강대학교 전자공학과)
- Kim, Chul Ju (Dept. of Elec. Eng., Seoul City Univ.) ;
- Koh, Youn Kyu (Dept. of Physics, Yonsei Univ.) ;
- Ahn, Chul (Dept. of Elec. Eng., Seokang Univ.)
- 발행 : 1986.06.01
초록
Boron monophosphide(100) was eitaxially grown on Si(100) substrate by thermal reaction of B2H6 and PH3 in hydrogen ambient. In an LPCVD system, the growth condition was studied as a function of gas mixture composition and temperature. For the growth temperature of 950\ulcorner in the constant flow rate (partial pressure) of B2H6, n-BP with c(2x2) surface structure was obtained in the PH3 partial pressure of 300-500 cc/min. On the other hand, for the growth temperature of 1080\ulcorner, p-BP with surface structure was observed for the PH3 partial pressure of 400-500cc/min.
키워드