Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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The Effect of Ion Implantation on the Barrier Height in PtSi-nSi Schottky Diode

PtSi-nSi 쇼트키 다이오드에서 이온 주입이 장벽높이의 변화에 미치는 영향

  • Lee, Yong Jae (Dept. of Elec. Eng., Yon Sei Univ.) ;
  • Lee, Moon Key (Dept. of Elec. Eng., Yon Sei Univ.) ;
  • Kim, Bong Ryul (Dept. of Elec. Eng., Yon Sei Univ.)
  • 이용재 (연세대학교 전자공학과) ;
  • 이문기 (연세대학교 전자공학과) ;
  • 김봉렬 (연세대학교 전자공학과)
  • Published : 1986.05.01
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Abstract

A shallow n+ layer of implanted phosphorus was used to lower the barrier height of PtSinSi schottky diodes. The reduction of barrier height of the forward turn-on voltages from 400mV to 180mV of the forward was followed by implantation of phosphorus at 35KeV with an ion dose of 8.0x10**12 atoms/cm\ulcornerand was activated at 925\ulcorner for 30min in dry O2. The test result showed that, as the ion-implanted dose increased, the forward turn-on voltage and reverse breakdown voltage were linearly decreased, but the saturation current and ideality factor(n) were linearly increased.

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