Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Photoconductive Property and Its Application of $Sb_2S_3$ Thin film

$Sb_2S_3$ 박막의 광도전특성 및 그 응용

  • Yun, Young Hoon (Dept. of Elec. Eng., Kyungpook National Univ.) ;
  • Park, Ki Cheol (Dept. of Elec. Eng., Kyungpook National Univ.) ;
  • Choi, Gyu Man (Dept. of Elec. Eng., Kyungpook National Univ.) ;
  • Kim, Ki Wan (Dept. of Elec. Eng., Kyungpook National Univ.)
  • 윤영훈 (경북대학교 전자공학과) ;
  • 박기철 (경북대학교 전자공학과) ;
  • 최규만 (경북대학교 전자공학과) ;
  • 김기완 (경북대학교 전자공학과)
  • Published : 1986.05.01
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Abstract

Sb2S3 thin films were fabricated by vacuum evaporation of compound Sb2S3 at a pressure of 10**-5 torr. and in argon ambient. Then, their electrical and photoconductive properties were investigated. The Sb2S3 glass-layer showed maximum photosensitivity at the deposition rate of 250\ulcornersec, and Sb2S3 porous layer had mininum dielectric constant of 1.5 at the deposition rate of 0.3 um/sec and argon partial pressure of 0.2torr. Sb2S3 multi-layers were prepared at the different thickness ratio (B/A) to find the proper structural property suited for camera pick-up tube. Here, A is the sum of the thickness of Sb2S3 porous layer and Sb2S3 fine grain layer, and B is the thickness of Sb2S3 fine grain layer. As a result, photosensitivity had a peak value at the thickness ratio (B/A) of 60%.

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