Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Temperature Effects on the Optical Properties of Doped Amorphous Silicon

도우핑된 비정질 실리콘의 온도에 따른 광학적 특성

  • Park, Jin Seok (Dept. of Electrical Eng., Seoul National Univ.) ;
  • Han, Min-Koo (Dept. of Electrical Eng., Seoul National Univ.) ;
  • Lee, Chung Han (Dept. of Elec. Eng., Seoul National Univ.)
  • 박진석 (서울대학교 전기공학과) ;
  • 한민구 (서울대학교 전기공학과) ;
  • 이정한 (서울대학교 전자공학과)
  • Published : 1986.04.01
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Abstract

Experimental results are reported concerning temperture effects from room temperature to 100\ulcorner on the optical properties of N-and P-type hydrogenated amorphous silicon films prepared by RF glow discharege. Optical absorption coefficient and optical bandgap have been measured and analyzed as a function of temperature. Optical absorption coefficient increase monotonically with temperature, while the optical bandgape of doped amorphous silicons decrease linearly by about 4-7x10**-4 [ev/k].

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