대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)
- 제23권6호
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- Pages.868-873
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- 1986
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- 1016-135X(pISSN)
GaAs MESFET을 이용한 MIC 게이트 Mixer의 설계 및 제작
Design and Fabrication of a MIC Gate Mixer Using GaAs MESFET
- 박한규 (연세대학교 전자공학과) ;
- 김남수 (연세대학교 전자공학과)
- Park, Han Kyu (Dept. of Elec. Eng., Yonsei Univ.) ;
- Kim, Nam Su (Dept. of Elec. Eng., Yonsei Univ.)
- 발행 : 1986.06.01
초록
The Schottky barrier diode has been used as an element of the mixer inspite of its conversion loss. In this paper the use of a GaAs MESFET is shown as a device of mixer, and the conversion gain is obtained. Also, input matching circuits aredesigned by s-parameter and fabricated on a dielectric teflon epoxy fiber glass substrate. According to the results, the conversion gain is 9 dB at the signal frequency of 4 GHz and the intermediate frequency of 1.217GHz.
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