Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on the Electrical Characteristics of Oxide Grown from Phosphorus-Doped Polysilicon

인 도핑 다결정 실리콘 산화막의 전기적 특성에 관한 연구

  • Yoon, Hyung Sup (Electronics and Telecommunications Research Institute) ;
  • Kang, Sang Won (Electronics and Telecommunications Research Institute) ;
  • Park, Sin Chong (Electronics and Telecommunications Research Institute)
  • 윤형섭 (한국전자통신연구소) ;
  • 강상원 (한국전자통신연구소) ;
  • 박신종 (한국전자통신연구소)
  • Published : 1986.06.01
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Abstract

In this work the electrical conduction and breakdown properties of thermal oxides grown on phosphorus-doped polysilicon have been investigated by using ramped I-V measurements. The oxide films, grown from phosphorus-doped polysilicon deposited at 560\ulcorner, have higher breakdown field(6.8MV/cm) and lower leakage current than those deposited at 625\ulcorner. Also the effective energy barrier height(\ulcorner)calculated from the Fowler-Nordheim curve of polyoxide was 0.76eV for 560\ulcorner deposited film and 0.64eV for 625\ulcorner deposited film.

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