Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Design of Ion-Implanted GaAs MESFET's Having High Transconductance Characteristics

이온 주입공정에 의한 고 GaAs MESFET의 설계

  • Lee, Chang Seok (Electronics and Telecoms. Research Institute) ;
  • Shim, Gyu-Hwan (Electronics and Telecoms. Research Institute) ;
  • Park, Hyung Moo (Electronics and Telecoms. Research Institute) ;
  • Park, Sin-Chong (Electronics and Telecoms. Research Institute)
  • 이창석 (한국전자통신연구소) ;
  • 심규환 (한국전자통신연구소) ;
  • 박형무 (한국전자통신연구소) ;
  • 박신종 (한국전자통신연구소)
  • Published : 1986.06.01
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Abstract

The current-voltage characteristics of ion-implanted GaAs MESFET's have been simulated by using the velocity saturation model. Using this model, a MESFET with threshold voltage of -0.5V and transconductance of 460 mS/mm is designed. To implement high transconductance MESFET's, low energy ion-implantation (20 keV) and RTP(Rapid Thermal Process) activation ($575^{\circ}C$, 5sec) processes are required.

포화속도 모델을 이용하여 이온주입공정에 의한 GaAs MESFET를 설계하였다. 20KeV의 $Si^+$ 이온 주입공정과 $975^{\circ}C$ 5sec의 RTP 활성화공정에 의해 $V_{th}$가 -0.5V 일때의 gm이 460ms/mm인 MESFET를 설계할 수 있었다.

Keywords