Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 23 Issue 6
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- Pages.789-794
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- 1986
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- 1016-135X(pISSN)
A Design of Ion-Implanted GaAs MESFET's Having High Transconductance Characteristics
이온 주입공정에 의한 고 GaAs MESFET의 설계
- Lee, Chang Seok (Electronics and Telecoms. Research Institute) ;
- Shim, Gyu-Hwan (Electronics and Telecoms. Research Institute) ;
- Park, Hyung Moo (Electronics and Telecoms. Research Institute) ;
- Park, Sin-Chong (Electronics and Telecoms. Research Institute)
- 이창석 (한국전자통신연구소) ;
- 심규환 (한국전자통신연구소) ;
- 박형무 (한국전자통신연구소) ;
- 박신종 (한국전자통신연구소)
- Published : 1986.06.01
Abstract
The current-voltage characteristics of ion-implanted GaAs MESFET's have been simulated by using the velocity saturation model. Using this model, a MESFET with threshold voltage of -0.5V and transconductance of 460 mS/mm is designed. To implement high transconductance MESFET's, low energy ion-implantation (20 keV) and RTP(Rapid Thermal Process) activation (
포화속도 모델을 이용하여 이온주입공정에 의한 GaAs MESFET를 설계하였다. 20KeV의
Keywords