다결정 실리콘 자기정렬에 의한 바이폴라 트랜지스터의 제작

The Fabrication of Polysilicon Self-Aligned Bipolar Transistor

A novel n-p-n bipolar transistor of which emitter is self-aligned with base contact by polyilicon is developed for using in high speed and high packing density LSI circuits. The emitter of this transistor is separated less than 0.4 \ulcorner with base contact by self-aligh technology, and the emitter feature size is less than 3x5 \ulcorner\ulcorner Because the active region of this transistor is not damaged through all the process, it has excellent electric properties. Using the n-p-n transistors by 3.0\ulcorner design rules, a NTL ring oscillator has 380 ps, a CML ring oscillator has 390ps, and a I\ulcorner ring oscillator has 5.6ns of per-gate minimum propagation delay time.