대한전기학회논문지 (The Transactions of the Korean Institute of Electrical Engineers)
- 제35권10호
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- Pages.465-472
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- 1986
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- 0254-4172(pISSN)
$Al-Al_2O_3-Si$ (N형)의 MAS 구조에 있어서 고전계에 의한 Carrier 주인과 트?에 관한 연구
A Study on Carrier Injection and Trapping by the High Field for MAS (Al-Al2O3-Si(n)) Structure
초록
The present study was carried out to investigate the mechanism which control the voltage instability and the breakdown of CVD Al2O3 on Si substrates. Our sample were metal-Al2O3-Oi Capacitors with both Al and Au field plates. Electron injection and trapping, with resultant positive flatband voltage shift, occur at fields as low as 1-2[MV/cm.] We developed an approximate method for computing the location of the centroid of the trapped electrons. Our results indicate that the electrons are trapped near the injecting interface, at least for fields less than about 5[MV/cm ] Because of continued charging, a true steady state is probably never reached, and the only unique I-V curve is the one obtained initially, when the traps are empty. We measured this I-V curve for both polarities of applied voltage, using a fresh sample for each point. The observed current densities are much larger than those obtained in thermally grawn SiO2.
키워드