The Transactions of the Korean Institute of Electrical Engineers (대한전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Study on Dark EMF Phenomena in Al/Amorphous Se/Al Structure

Al/비정질 Se/Al구조에서의 암기력발생현상에 관한 연구

  • 정홍배 (광운대학 전자재료공학과) ;
  • 신병규 (광운대학 전자재료공학과) ;
  • 이영종 (광운대학 전자재료공학과)
  • Published : 1983.06.01
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Abstract

In this paper, we investigated that the Al-Amorphous Se-Al structure had a large photovoltage and a Dark EMF (DEMF). This DEMF phenomena did not show just after the fabrication of a sample. However, it was shown after a few days, and it was increased with time, and was saturated after 30 days. Just after the fabrication of a sample, by appling the positive voltage on a sample for 100mins, we observed almost the same effect as had shown in a aging experiment. As the results, we found that Al3+ ions has related to a DEMF by migrating into amorphous Se, and form a trap in amorphous Se. We have also observed the photocapacitance effect to identify this trap formation.

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