As-Te-Si-Ge 유리질 반도체의 전기전도에 관한 연구

A Study on Electrical Conduction of As-Te-Si-Ge Amorphous Semiconductor

As-Te.Si-Ge 유리질 반도체의 직류 펀도도는 실온에서 3x10-7Ω-1cm-1∼1.5x10-8Ω-1cm-1이었고 각 시료의 온도 인화에 따른 전도특성은 상전이 온도(Tg) 이하에서 o=ooexp(-△E/kT)로 표시할 수 있었다. 또한 실온에서 각 시료의 교류 전도도의 주파수 의존도는 거의 같았으며 직류 전도도에 비해 상당치 높게 나타나서 o(w)=oo+Awn으로 표시할 수 있었다. 200KHz 경우에 교류 펀도도는 295。K∼473。K에서 온도에 무관하고 200Hz 경우에는 433。K에서 부터 심하게 증가하였다. 각 시fy는 기억스위칭 현상은 없었고 문지받스위칭 현상만 관찰할 수 있었다. The dc conductivity, ac conductivity and switching effect of As·Te-Si·Ge have beon investigated. The dc conductivity ranged from 3x10-7Ω-1cm-1∼1.5x10-8Ω-1cm-1 at room temperature and was found to be expressed by o=ooexp(-△E/kT) below the phase transition temperature Tg. The ac conductivity was much higher than dc conductivity and this result is consistent to experimental formula o(w)=oo+Awn. In the temperature range of 298。K∼147。K, the ac conductivity was independent of temperature at 200KHs. At lower frequencies the ac conductivity increased strong1y with temperature. Also, it has been found that all samples showed a threshold switching, but not a memory switching.

The dc conductivity, ac conductivity and switching effect of As.Te-Si.Ge have beon investigated. The dc conductivity ranged from $3{\times}10^{-7}{\Omega}^{-1}cm^{-1}$ to $1.5{\times}10^{-8}{\Omega}^{-1}cm^{-1}$ at room temperature and was found to be expressed by ${\sigma}$ = ${\sigma}_0$exp(-${\Delta}$E/kT) below the phase transition temperature Tg. The ac conductivity was much higher than dc conductivity and this result is consistent to experimental formula ${\sigma}$(w)=${\sigma}_0+Aw^n$. In the temperature range of 298$^{\circ}K$ ~ $473^{\circ}K$ the ac conductivity was independent of temperature at 200KHs. At lower frequencies the ac conductivity increased strong1y with temperature. Also, it has been found that all samples showed a threshold switching, but not a memory switching.