The Physical Properties of Silicon and Silicon-Oxide by Epitaxial Growth (1)

기상성장에 의한 Si단결정과 Si산화막의 특성( 1 )

  • 성영권 (고려대학교 이공대학) ;
  • 오석주 (동양공업전문학교 전기공학과) ;
  • 김석기 (고려대학교 대학원 전기공학과) ;
  • 이상수 (고려대학교 대학원 전기공학과)
  • Published : 1973.03.01

Abstract

This paper reports some results of Si and SiO$_{2}$ films obtained from the expitaxial growth by hydrogen reduction of SiCI$_{4}$ with a hydrogen and carbon dioxide mixture in an epitaxial-deposition chamber. The deposited Si and SiO$_{2}$ are studied by observing the process parameters affecting the rate of deposition, and the quantitative properties at the interface of Si and SiO$_{2}$ are also considered briefly according to the results of the optical absorption and the voltage-current characteristic of MOS etc. using step etching procedure for oxide films.

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