An Experimental Research On Nonlinear Characteristics Of Disk-Type Siliconcarbide Resistors With The Sinusoidal Alternating Currents

Silicon carbide저항소자의 교류 비선형특성에 관한 연구

  • 조철 (서울대학교 공과대학 전기공학과) ;
  • 오명환 (한국과학기술연구소 전기기기연구실)
  • Published : 1972.03.01

Abstract

The main focus of this paper is on the study of voltage-current characteristics in disk-type siliconcarbide resistors. For each of the 15 different sintering and other process conditions, 10 samples were prepared. Experiments performed with each sample consist of supplying sinusoidal AC current of a few miliamperes after conditioning-shots with 400ma. Experimental data were examined with regard to the relationship between the process conditions and the nonlinear resistivity. The examination suggests several possibilities of improving the nonlinlinear characteristics of siliconcarbide resistors while maintaining low resitance. One of those possible conditions is to sinter the powdered SiC and the binding materials approximately 2 hours in nitrogen. In addition to describing the nonlinear characteristics of siliconcarbide resistors, this paper also presents the distortion characteristics of current waves vs. the nonlinear exponent, n. Photographical results show that the more nonlinear characteristics samples have, the more distorted current waves are.

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