Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2017.10a
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- Pages.454-456
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- 2017
터널 전계 효과 트랜지스터의 양자모델에 따른 특성 변화
- Lee, Ju Chan (Dept. of Electrical, Electronic and Control Eng., Hankyong National University) ;
- Ahn, Tae Jun (Dept. of Electrical, Electronic and Control Eng., Hankyong National University) ;
- Yu, Yun Seop (Dept. of Electrical, Electronic and Control Eng., Hankyong National University)
- Published : 2017.10.25
Abstract
Current and capacitance-voltage characteristics of tunnel field effect transistor (TFET) with various quantum models were investigated. Density gradient, Bohm quantum potential (BQP), and Vandort quantum correction are used with calibrating against Schrodinger-Poisson model. Drive-currents in all models. are decreased. When only BQP is used, SS and
다양한 양자모델(Quantum model)을 적용한 터널 전계 효과 트랜지스터(tunnel field effect transistor; TFET)의 전류 및 커패시턴스(Capacitance)-전압 특성을 조사하였다. 사용된 양자 모델은 density gradient, Bohm Quantum Potential(BQP), Vandort quantum correction 모델을 슈뢰딩거-푸아송 모델과 calibration하여 사용하였다. BQP, Vandort, density gradient 모두 구동전류는 감소하였다. BQP를 단독으로 사용한 경우에 SS(subthreshold swing)와 on-set 전압(